maximum ratings(each diode) rating symbol v alue unit reverse voltage v r 100 vdc forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking MMBD7000LT1 = m5c electrical characteristics (t a = 25c unless otherwise noted) (each diode) characteristic symbol min max unit off characteristics reverse breakdown voltage v (br) 100 ? vdc (i (br) = 100 adc) reverse voltage leakage current adc (v r = 50 vdc) i r ? 1.0 (v r = 100 vdc) i r2 ? 3.0 (v r = 50 vdc,125c) i r3 ? 100 forward voltage v f vdc (i f = 1.0 madc) 0.55 0.7 (i f = 10 madc) 0.67 0.82 (i f = 100 madc) 0.75 1.1 reverse recovery time t rr ? 4.0 ns (i f = i r = 10 madc) (figure 1) capacitance(v r =0v) c ? 1.5 pf 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. case 318C08, style11 sotC 23 (toC236ab) 3 cathode/anode 1 anode 2 cathode mm bd7000lt1 200m a surface mount switching diode -10 0v so t - 23 p ackage 2012-1 willas electronic corp.
notes: 1. a 2.0 k ? variable resistor adjusted for a forward current (i f ) of 10ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10ma. notes: 3. t p ? t rr figure 1. recovery time equivalent test circuit +10 v 2.0 k 820 ? 100 h 0.1 f dut 0.1 f 50 ? output pulse generator t r 50 ? input sampling oscilloscope t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) input signal i f v r i f , forward current (ma) i r , reverse current ( a) 10 1.0 0.1 0.01 0.001 01020304050 100 10 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 v r , reverse voltage (volts) figure 3. leakage current v f , forward voltage (volts) figure 2. forward voltage t a = ?40c t a = 85c t a = 25c t a =125c t a =150c t a =85c t a =55c t a =25c 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 v r , reverse voltage (volts) figure 4. capacitance c d , diode capacitance (pf) curves applicable to each cathode 2012-1 willas electronic corp. mm bd7000lt1 200m a surface mount switching diode -10 0v so t - 23 p ackage
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012-1 willas electronic corp. mm bd7000lt1 200m a surface mount switching diode -10 0v so t - 23 p ackage dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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